Decrease in surface states on GaAs metal-semiconductor field-effect transistor by high temperature operation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 4 A, 1997, Pages 2068-2072

  Sasaki, Hajime ^a,b   Hayashi, Kazuo ^a   Fujioka, Takashi ^a   Mizuguchi, Kiyoshi ^a   Yea, Byeongdeok ^b   Osaki, Tomoyuki ^b   Sugahara, Kazunori ^b   Konishi, Ryosuke ^b   Kasada, Hirofumi ^b   Ando, Koshi ^b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b TOTTORI UNIVERSITY   (Japan)

Author keywords

Drain current transient; GaAs MESFET; Hot carrier; Impact ionization; Interface state; Reliability; Surface state

Indexed keywords

DRAIN CURRENT TRANSIENT ANALYSIS;

ENERGY GAP; HIGH TEMPERATURE OPERATIONS; HOT CARRIERS; SEMICONDUCTING GALLIUM ARSENIDE;

MESFET DEVICES;

EID: 0031117684     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.2068     Document Type: Article

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