The mechanism of radiative recombination in light-emitting devices composed on InGaN quantum wells

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

Volumn 81, Issue 7, 1998, Pages 45-56

  Kawakami, Yoichi ^a   Narukawa, Yukio ^a   Sawada, Ken ^a   Saijyo, Shin ^a   Fujita, Shizuo ^a   Fujita, Shigeo ^a   Nakamura, Shuji ^b  

^a KYOTO UNIVERSITY   (Japan)

^b NICHIA CORPORATION   (Japan)

Author keywords

InGaN light emitting device; Light emitting mechanism; Localized exciton; Quantum dot; Time resolved spectroscopy

Indexed keywords

EXCITONS; LIGHT EMISSION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPY;

LIGHT-EMITTING MECHANISM;

LIGHT EMITTING DIODES;

EID: 0032121365     PISSN: 8756663X     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1520-6432(199807)81:7<45::AID-ECJB6>3.0.CO;2-1     Document Type: Article

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