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Volumn 12, Issue 4, 1996, Pages 305-308
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Electromigration of interconnects of a TiN/Cu/TiN/Ti structure
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Author keywords
Activation energy; Copper; Interconnection; Reliability
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Indexed keywords
ACTIVATION ENERGY;
ANNEALING;
COPPER;
CURRENT DENSITY;
DIFFUSION;
ELECTRIC WIRING;
GRAIN BOUNDARIES;
INTEGRATED CIRCUITS;
INTERFACES (MATERIALS);
MAGNETRON SPUTTERING;
RELIABILITY;
TITANIUM NITRIDE;
BLACK PARAMETERS;
INTERCONNECTION;
ELECTROMIGRATION;
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EID: 0030197266
PISSN: 07488017
EISSN: None
Source Type: Journal
DOI: 10.1002/(sici)1099-1638(199607)12:4<305::aid-qre41>3.0.co;2-1 Document Type: Article |
Times cited : (2)
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References (9)
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