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Volumn 70, Issue 26, 1997, Pages 3573-3575

Redshifting of a bound-to-continuum GaAs/AIGaAs quantum-well infrared photodetector response via laser annealing

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRANSITIONS; LASER APPLICATIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 5944228965     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119237     Document Type: Article
Times cited : (14)

References (25)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.