15-μIT1128 × 128 GaAs/AlxGa1-xas quantum well infrared photodetector focal plane array camera

IEEE Transactions on Electron Devices

Volumn 44, Issue 1, 1997, Pages 45-50

  Gunapala, Sarath D ^a   Park, Jin S ^a   Sarusi, Gabby ^a   Lin, True Lon ^a   Liu, John K ^a   Maker, Paul D ^b   Muller, Richard E ^b   Shott, Craig A ^b   Hoelter, Ted ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAMERAS; ELECTRON TRANSITIONS; ETCHING; INFRARED IMAGING; MATRIX ALGEBRA; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

NOISE EQUIVALENT DIFFERENTIAL TEMPERATURE; QUANTUM WELL INFRARED PHOTODETECTOR (QWIP) FOCAL PLANE ARRAY CAMERA;

INFRARED DETECTORS;

EID: 0030735703     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.554790     Document Type: Article

References (12)

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