High-quality extended cavity ridge lasers fabricated by impurity-free vacancy diffusion with a novel masking technique

IEEE Photonics Technology Letters

Volumn 9, Issue 3, 1997, Pages 282-284

  Cusumano, P ^b,c   Marsh, J H ^a,b   Rose, M J ^d   Roberts, J S ^e  

^a IEEE

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c UNIVERSITY OF PALERMO   (Italy)

^d UNIVERSITY OF DUNDEE   (United Kingdom)

^e UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Diffusion processes; Integrated optoelectronics; Optical losses; Quantum well lasers; Semiconductor waveguides

Indexed keywords

ELECTRIC CURRENTS; HETEROJUNCTIONS; INTEGRATED OPTOELECTRONICS; INTERDIFFUSION (SOLIDS); PHOTOLITHOGRAPHY; QUANTUM WELL LASERS; RESONANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; WAVEGUIDES;

FABRY RESONANCE METHOD; IMPURITY FREE VACANCY DIFFUSION PROCESS; INTEGRATED TRANSPARENT WAVEGUIDE; OHMIC CONTACT DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RIDGE LASERS; SEMICONDUCTOR WAVEGUIDES; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0031104451     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.556047     Document Type: Article

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