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Electronics Letters

Volumn 33, Issue 3, 1997, Pages 213-214

Mirror passivation of InGaAs lasers

(7) Dutta, N K a Hobson, W S a Zydzik, G J a De Jong, J F a Parayanthal, P a Passlack, M a Chakrabarti, U K a

a LUCENT TECHNOLOGIES (United States)

Author keywords

Gallium indium arsenide; Semiconductor junction lasers

Indexed keywords

AGING OF MATERIALS; EMISSION SPECTROSCOPY; ETCHING; HIGH POWER LASERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDES; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACE PROPERTIES;

FACET CLEAVING; GALLIUM INDIUM ARSENIDE; GALLIUM OXIDE; MIRROR PASSIVATION; PHOTOLUMINESCENCE MEASUREMENTS;

SEMICONDUCTOR LASERS;

EID: 0030781880 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:19970125 Document Type: Article

Times cited : (12)

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