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Volumn 50, Issue 3-4, 1998, Pages 463-471

Wide band-gap II-VI compounds - Can efficient doping be achieved?

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL LATTICES; ENERGY GAP; ION IMPLANTATION; LIGHT EMITTING DIODES; LOW TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; POINT DEFECTS; RELAXATION PROCESSES; SEMICONDUCTOR DOPING; SOLUBILITY; VAPOR PHASE EPITAXY;

EID: 0032108540     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(98)00081-5     Document Type: Article
Times cited : (15)

References (74)
  • 3
  • 9
    • 0002478487 scopus 로고
    • ed. S. P. Keller, North-Holland Publ. Co.
    • van Vechten, J. A., in Handbook on Semiconductors, Vol. 3., ed. S. P. Keller, North-Holland Publ. Co. 1982, pp. 1-111.
    • (1982) Handbook on Semiconductors , vol.3 , pp. 1-111
    • Van Vechten, J.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.