DX centers in II-VI semiconductors and heterojunctions

Journal of Electronic Materials

Volumn 25, Issue 2, 1996, Pages 229-233

  Thio, Tineke ^a   Bennett, J W ^a   Chadi, D J ^a   Linke, R A ^a   Tamargo, M C ^b  

^a NEC LABORATORIES AMERICA   (United States)

^b CITY COLLEGE OF NEW YORK   (United States)

Author keywords

DX center; Ga doped ZnSe; GaAs ZnSe heterojunction; II VI semiconductor; Persistent photoconductivity

Indexed keywords

EID: 0013081323     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666249     Document Type: Article

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