Formation of highly conductive p-Type ZnSe using Li3N diffusion

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 7, 1996, Pages 3878-3879

  Honda, Tohru ^a   Lim, Sung Wook ^a   Yanashima, Katsunori ^a   Inoue, Kousuke ^a   Hara, Kazuhiko ^a   Munekata, Hiro ^a   Kukimoto, Hiroshi ^a   Koyama, Fumio ^a   Iga, Kenichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Diffusion; Lithium nitride; MOVPE; Ohmic contact; p type doping; Zinc selenide

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; LITHIUM; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; SELENIUM; ZINC;

LITHIUM NITRIDE; LOW-RESISTANCE CONTACT;

OHMIC CONTACTS;

EID: 0030196438     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.3878     Document Type: Article

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