Rotation of a silicon dimer over the trench between dimer rows on the Si(001) surface

Surface Science

Volumn 407, Issue 1-3, 1998, Pages

  Goringe, C M ^a,c   Bowler, D R ^a,b  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b KEELE UNIVERSITY   (United Kingdom)

^c UNIVERSITY OF SYDNEY   (Australia)

Author keywords

Density functional calculations; Growth; Low index single crystal surfaces; Silicon; Surface chemical reaction

Indexed keywords

CRYSTAL ORIENTATION; EPITAXIAL GROWTH; PROBABILITY DENSITY FUNCTION; SINGLE CRYSTALS; SURFACES;

DENSITY FUNCTIONAL CALCULATIONS; SILICON DIMER;

SILICON;

EID: 0032099047     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00304-5     Document Type: Article

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