gas avalanche pixel detectors with amorphous silicon carbide (a-Si:C:H) overcoating

IEEE Transactions on Nuclear Science

Volumn 45, Issue 3 PART 1, 1998, Pages 252-257

  Hong, W S ^a   Cho, H S ^b   Biagi, S ^c   Retiereb, F ^d   Kadyk, J ^a   Perez Mendez, V ^b   Palaio, N ^c   Vujic, J ^d  

^a Physics Division   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF LIVERPOOL   (United Kingdom)

^d University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANODES; CATHODES; COATINGS; ELECTRIC FIELDS; ELECTRONS; IONIZATION; SILICON CARBIDE;

AMORPHOUS SILICON CARBIDE; DEFOCUSING EFFECTS; GAS AVALANCHE PIXEL DETECTORS;

RADIATION DETECTORS;

EID: 0032098924     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.682389     Document Type: Article

References (17)

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