Microstrip gas chambers fabrication based on amorphous silicon and its carbon alloy

IEEE Transactions on Nuclear Science

Volumn 43, Issue 3 PART 2, 1996, Pages 1165-1169

  Hong, W S ^a   Cho, H S ^a   Perez Mendez, V ^a   Kadyk, J ^a   Luk, K B ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CARBON STEEL; COATING TECHNIQUES; ELECTRIC CONDUCTIVITY; ELECTRODES; GAIN CONTROL; HYDROGENATION; IRRADIATION; SEMICONDUCTOR DOPING; SUBSTRATES; SURFACE TREATMENT; THIN FILMS;

CARBON ALLOY; FULL WIDTH AT HALF MAXIMUM; HYDROGENATED AMORPHOUS SILICON; MICROSTRIP GAS CHAMBERS; SURFACE COATING; THIN SEMICONDUCTING FILMS;

SCINTILLATION COUNTERS;

EID: 0030171310     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.506657     Document Type: Article

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