Performance of microstrip gas chambers with conductive surface coating of doped amorphous silicon carbide (a-Si : C : H)

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 401, Issue 1, 1997, Pages 81-88

  Cho, H S ^a,b   Hong, W S ^b   Kadyk, J ^b   Perez Mendez, V ^b   Kim, J G ^c   Vujic, J ^a  

^a Etcheverry Hall MCI 730   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c Myong Ji University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CONDUCTIVE FILMS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; MICROSTRIP DEVICES; RADIATION HARDENING; SILICON CARBIDE;

CONDUCTIVE COATINGS; MICROSTRIP GAS CHAMBERS; RADIATION HARDNESS;

PARTICLE DETECTORS;

EID: 0031365761     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)00934-0     Document Type: Article

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