High-Efficient Class F GaAs FET Amplifiers Operating with Very Low Bias Voltages for Use in Mobile Telephones at 1.75 GHz

IEEE Microwave and Guided Wave Letters

Volumn 3, Issue 8, 1993, Pages 268-270

  Duvanaud, C ^a   Dietsche, S ^b   Pataut, G ^b   Obregon, J ^a  

^a CNRS   (France)

^b THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CORDLESS TELEPHONES; ELECTRIC BATTERIES; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); OPTIMIZATION; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE;

BIAS VOLTAGES; CLASS F GALLIUM ARSENIDE FIELD EFFECT AMPLIFIERS;

MICROWAVE AMPLIFIERS;

EID: 0027641763     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.242219     Document Type: Article

References (5)

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