Electrical characteristics of nearly relaxed InAs/GaP heterojunctions

Applied Physics Letters

Volumn 70, Issue 12, 1997, Pages 1551-1553

  Chen, E H ^a   Chin, T P ^a   Woodall, J M ^a   Lundstrom, M S ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 2342531582     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118614     Document Type: Article

References (10)

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