Basic Properties of the Electrolyte-SiO2-Si System: Physical and Theoretical Aspects

IEEE Transactions on Electron Devices

Volumn 26, Issue 11, 1979, Pages 1805-1815

  Cobbold, Richard S C ^b  

^a CASE WESTERN RESERVE UNIVERSITY   (United States)

^b UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

SEMICONDUCTOR DEVICES;

EID: 0018547858     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1979.19690     Document Type: Article

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