Short Communications: Development of an Ion-Sensitive Solid-State Device for Neurophysiological Measurements

IEEE Transactions on Biomedical Engineering

Volumn BME-17, Issue 1, 1970, Pages 70-71

  Bergveld, P ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ION;

ARTICLE; ELECTRODE; ELECTRONICS; INSTRUMENTATION; NEUROPHYSIOLOGY;

ELECTRODES; ELECTRONICS, MEDICAL; IONS; NEUROPHYSIOLOGY;

BIOENGINEERING; TRANSISTORS, FIELD EFFECT; VE;

EID: 0014698380     PISSN: 00189294     EISSN: 15582531     Source Type: Journal    
DOI: 10.1109/TBME.1970.4502688     Document Type: Article

References (5)

1. H. K. J. Ihantola and J. L. Moll, “Design theory of a surface field-effect transistor,” Solid-State Electronics, vol. 7, pp. 423-430, 1964.
2. B. E. Deal. M. Sklar, A. S. Grove, and E. H. Snow, “Characteristics of the surface state charge (Gas) of thermally oxidized silicon,” J. Elecirochem. Soc, vol. 114, pp. 266-274, March 1967.
3. G. Eisenman, “Cation selective glass electrodes and their mode of operation,” Biophys. J., vol. 2, pp. 259-323, 1962.
4. P. Bergveld, “New amplification method for depth recording,” IEEE Trans. Bio-Medical Engineering, vol. BME-15, pp. 102-105, April 1968.
5. “The influence of substrate bias upon the ac characteristics of MOS transistors,” Proc. IEEE (Letters), vol. 57, pp. 72-73, January 1969.