Ion-Sensing Devices with Silicon Nitride and Borosilicate Grlass Insulators

IEEE Transactions on Electron Devices

Volumn 34, Issue 8, 1987, Pages 1700-1707

  Harame, David L ^a   Bousse, Luc J ^a   Shott, John D ^a   Meindl, James D ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GLASS; HYDROGEN ION CONCENTRATION - PH METERS; SILICON NITRIDE;

TRANSISTORS, FIELD EFFECT;

EID: 0023401502     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.23140     Document Type: Article

References (32)

1. P. Bergveld, “Development, operation, and application of the ion-sensitive field-effect transistor as a tool for electrophysiology,” IEEE Trans. Biomed. Eng., vol. BME-19, p. 342, 1972.
2. J. Janata and R. J. Huber, “Chemically sensitive field effect transistors,” in Ion Selective Electrodes in Analytical Chemistry, vol. 2, H. Freiser Ed. New-York: Plenum, 1980, p. 107.
3. T. Matsuo and K. D. Wise, “An integrated field-effect electrode for biopotential recording,” IEEE Trans. Biomed. Eng., vol. BM-21, p. 485, Nov. 1974.
4. T. Matsuo and M. Esashi, “Methods of ISFET fabrication,” Sensors and Actuators, vol. 1, pp. 77-96, 1981.
5. D. Harame, J. Shott, J. Plummer, and J. D. Meindl, “An implantable ion sensor transducer,” in IEDM Tech. Dig., p. 467, 1981.
6. W. M. Siu and R. S. C. Cobbold, “Basic properties of the electrolyte-SiO2-Si system: Physical and theoretical aspects,” IEEE Trans. Electron Devices, vol. ED-26, p. 1805, Nov. 1979.
7. I. R. Lauks and J. N. Zemel, “The Si3-N41;-Si ion-sensitive semiconductor electrode,” IEEE Trans. Electron Devices, vol. ED-26, p. 1959, 1979.
8. L. Bousse, N. F. de Rooij, and P. Bergveld, “Operation of chemically sensitive field-effect sensors as a function of the insulator-electrolyte interface,” IEEE Trans. Electron Devices, vol. ED-30, p. 1263, Oct. 1983.
9. “The influence of counter-ion adsorption on the (formula omitted)/pH characteristics of insulator surfaces,” Surface Sci., vol. 135, p. 479, 19 33.
10. D. Harame, “Integrated circuit chemical sensors,” Ph.D. dissertation, Stanford Univ., 1984.
11. C. D. Fung, P. W. Cheung, and W. H. Ko, “A generalized theory of an electrolyte-insulator-semiconductor field-effect transistor,” IEEE Trans. Electron Devices, vol. ED-33, p. 8, Jan. 1986.
12. J. Lyklema, “The structure of the electrical double layer on porous surfaces,” J. Electroanal. Chem., vol. 18, p. 341, 1968.
13. S. Levine and A. L. Smith, “Theory of the differential capacity of the oxide/aqueous electrolyte interface,” Discuss. Faraday Soc., vol. 52, p. 290, 1971.
14. D. E. Yates, S. Levine, and T. W. Healy, “Site-binding model of the electrical double layer at the oxide/water interface,” J. Chem. Soc. Faraday Trans. I, vol. 70, p. 1807, 1974.
15. T. W. Healy and L. R. White, “Ionizable surface group models of aqueous interfaces,” Advan. Colloid Interface Sci., vol. 9, p. 303, 1978.
16. R. O. James and G. A. Parks, “Characterization of aqueous colloids by their electrical double-layer and intrinsic surface chemical properties,” in Surface and Colloid Science, Vol. 12, E. Matijevic Ed. New York: Plenum, 1982, p. 119.
17. W. Smit, C. L. M. Holten, H. N. Stein, J. J. M. de Goeij, and H. M. J. Theelen, “A radiotracer determination of the adsorption of sodium ion in the compact part of the double layer of vitreous silica,” J. Colloid Interface Sci., vol. 63, p. 120, Jan. 1978.
18. D. E. Yates and T. W. Healy, “The structure of the silica/electrolyte interface,” J. Colloid Interface Sci., vol. 55, p. 9, Apr. 1976.
19. P. T. McBride, J. Janata, P. A. Comte, S. D. Moss, and C. C. Johnson, “Ion-selective field effect transistors with polymeric membranes,” Anal. Chim. Acta, vol. 101, p. 239, 1978.
20. L. Bousse and P. Bergveld, “The role of buried OH sites in the response mechanism of inorganic-gate pH-sensitive ISFETs,” Sensors and Actuators, vol. 6, p. 65, 1984.
21. F. G. K. Baucke, J. Non-Cryst. Sol., vol. 40, p. 159, 1980.
22. L. Bousse and P. Bergveld, “On the impedance of the silicon dioxide/electrolyte interface,” J. Electroanal. Chem., vol. 152, p. 25, 1983.
23. R. M. Cohen, R. J. Huber, J. Janata, R. W. Ure Jr., and S. D. Moss, Thin Solid Films, vol. 53, p. 169, 1978.
24. R. K. Iler, The Chemistry of Silica. New York: Wiley, 1979.
25. K. Dousma, “A colloidal chemical study of the formation of iron oxy hydroxide,” Ph.D. dissertation, Rijksuniversiteit Utrecht, July 1979.
26. A. Sibbald, P. D. Whalley, and A. K. Covington, “A miniature flow-through cell with a four-function CHEMFET integrated circuit for simultaneous measurements of potassium, hydrogen, calcium and sodium ions,” Anal. Chim. Acta, vol. 159, p. 47, 1984.
27. O. Leistiko, “The selectivity and temperature characteristics of ion sensitive field effect transistors,” Physica Scripta, vol. 18, p. 445, 1978.
28. J. F. Schenck, “Technical difficulties remaining to the application of ISFET devices,” in Theory, Design, and Biomedical applications of Solid-state Chemical Sensors, P. W. Cheung et al., Eds. West Palm Beach, FL: CRC Press, 1978, p. 165.
29. P. H. Holloway and H. J. Stein, “Quantitative detection of oxygen in silicon nitride on silicon,” J. Electrochem. Soc., vol. 123, p. 723, May 1976.
30. M. L. Hair and W. Hertl, “Acidity of surface hydroxyl groups,” J. Phys. Chem., vol. 74, p. 91, 1970.
31. R. B. Heslop and P. L. Robinson, Inorganic Chemistry. New York: Elsevier, 1967.
32. M. J. D. Low and N. Ramasubramanian, “Infrared study of the nature of the hydroxy Is groups on the surface of porous glass,” J. Phys. Chem., vol. 70, p. 2740, 1966.