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1
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0014698380
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Development of an ion-sensitive solid state device for neurophysiological measurements
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Jan.
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P. Bergveld, “Development of an ion-sensitive solid state device for neurophysiological measurements,” IEEE Trans. Biomed. Eng., vol. BME-17, pp. 70-71, Jan. 1970.
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(1970)
IEEE Trans. Biomed. Eng.
, vol.BME-17
, pp. 70-71
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Bergveld, P.1
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2
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0016972690
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Chemically sensitive field effect transistors
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July
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J. Janata and D. Moss, “Chemically sensitive field effect transistors,” IEEE Trans. Biomed. Eng., vol. BME-23, pp. 241-245, July 1976.
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(1976)
IEEE Trans. Biomed. Eng.
, vol.BME-23
, pp. 241-245
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Janata, J.1
Moss, D.2
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3
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0016125184
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An integrated field effect electrode for biopotential recording
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Nov.
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T. Matsuo and K. Wise, “An integrated field effect electrode for biopotential recording,” IEEE Trans. Biomed. Eng., vol. BME-21, pp. 485187, Nov. 1974.
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(1974)
IEEE Trans. Biomed. Eng.
, vol.BME-21
, pp. 485187
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Matsuo, T.1
Wise, K.2
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4
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0015388173
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Development, operation and application of the ion-sensitive field-effect transistor as a tool for electrophysiology
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Sept.
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P. Bergveld, “Development, operation and application of the ion-sensitive field-effect transistor as a tool for electrophysiology,” IEEE Trans. Biomed. Eng., vol. BME-19, pp. 342-351, Sept. 1972.
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(1972)
IEEE Trans. Biomed. Eng.
, vol.BME-19
, pp. 342-351
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Bergveld, P.1
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5
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0017101877
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Extracellular potential recording by means of a field effect transistor without gate metal, called OSFET
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Mar.
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P. Bergveld, J. Wiersma, and H. Meertens, “Extracellular potential recording by means of a field effect transistor without gate metal, called OSFET,” IEEE Trans. Biomed. Eng., vol. BME-23, pp. 136-144, Mar. 1976.
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(1976)
IEEE Trans. Biomed. Eng.
, vol.BME-23
, pp. 136-144
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Bergveld, P.1
Wiersma, J.2
Meertens, H.3
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6
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0016573664
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Potassium ion-sensitive field effect transistor
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Nov.
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S. D. Moss, J. Janata, and C. C. Johnson, “Potassium ion-sensitive field effect transistor,” Anal. Chem., vol. 47, pp. 2238-2243, Nov. 1975.
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(1975)
Anal. Chem.
, vol.47
, pp. 2238-2243
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Moss, S.D.1
Janata, J.2
Johnson, C.C.3
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7
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33847802082
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Ion-sensitive field effect transistors and related devices
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Feb.
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J. N. Zemel, “Ion-sensitive field effect transistors and related devices,” Anal. Chem., vol. 47, no. 2, pp. 255A-268A, Feb. 1975.
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(1975)
Anal. Chem.
, vol.47
, Issue.2
, pp. 255A-268A
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Zemel, J.N.1
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8
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84914440074
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Chemically sensitive semiconductor devices
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Apr.
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“Chemically sensitive semiconductor devices,” Res./Devel., vol. 28, no. 4, pp. 38-44, Apr. 1977.
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(1977)
Res./Devel.
, vol.28
, Issue.4
, pp. 38-44
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9
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0018200086
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Integrated micro multi ion sensor using field effect of semiconductor
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Mar.
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M. Esashi and T. Matsuo, “Integrated micro multi ion sensor using field effect of semiconductor,” IEEE Trans. Biomed. Eng., vol. BME-25, pp. 184-192, Mar. 1978.
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(1978)
IEEE Trans. Biomed. Eng.
, vol.BME-25
, pp. 184-192
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Esashi, M.1
Matsuo, T.2
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10
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0018103328
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Physical mechanisms for chemically sensitive semiconductor devices
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June
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P. Bergveld, N. F. DeRooiu, and J. N. Zemel, “Physical mechanisms for chemically sensitive semiconductor devices,” Nature, vol. 273, no. 5662, pp. 438-443, June 1978.
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(1978)
Nature
, vol.273
, Issue.5662
, pp. 438-443
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Bergveld, P.1
DeRooiu, N.F.2
Zemel, J.N.3
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11
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84939352034
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The potential at blocked electrodes
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in preparation
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I. Lauks and J. N. Zemel, “The potential at blocked electrodes,” in preparation.
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-
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Lauks, I.1
Zemel, J.N.2
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12
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0039907248
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Field effect potentiometric sensors
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R. P. Buck and D. E. Hackleman, “Field effect potentiometric sensors,” Anal. Chem., vol. 43, p. 2315, 1977.
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(1977)
Anal. Chem.
, vol.43
, pp. 2315
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Buck, R.P.1
Hackleman, D.E.2
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13
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84939396228
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The chemically sensitive semiconductor device
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Dec.
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J. N. Zemel, “The chemically sensitive semiconductor device,” in Proc. 7th Technicon Int. Congr., pp. 68-74, Dec. 1976.
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(1976)
Proc. 7th Technicon Int. Congr.
, pp. 68-74
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Zemel, J.N.1
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14
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84939377069
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Geometric effects on the gate controlled capacitor
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Ph.D. dissertation, The Moore School of Electrical Engineering, University of Pennsylvania, Philadelphia, Aug.
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E. Slutsky, “Geometric effects on the gate controlled capacitor,” Ph.D. dissertation, The Moore School of Electrical Engineering, University of Pennsylvania, Philadelphia, Aug. 1978.
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(1978)
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Slutsky, E.1
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15
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84939355676
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A simple characterization of gate-to-substrate impedance in metal-oxide-semiconductor structure under non-equilibrium conditions
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Solid State Electronics Lab., Stamford Univ., Stamford, CA, Tech. Rep. 4825-2, SU-SEL-68-093, Office of Naval Research Contract, NONR-225(44), NR 375865, Dec.
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K. W. Andres, “A simple characterization of gate-to-substrate impedance in metal-oxide-semiconductor structure under non-equilibrium conditions,” Solid State Electronics Lab., Stamford Univ., Stamford, CA, Tech. Rep. 4825-2, SU-SEL-68-093, Office of Naval Research Contract, NONR-225(44), NR 375865, Dec. 1968.
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(1968)
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Andres, K.W.1
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16
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84939358438
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U.S. Patent 4 103 227, July
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J. N. Zemel, U.S. Patent 4 103 227, July 1978.
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(1978)
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Zemel, J.N.1
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17
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0015112807
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Thermal migration of liquid droplets through solids
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Aug.
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T. R. Anthony and H. E. Cline, “Thermal migration of liquid droplets through solids,” J. Appl. Phys., vol. 42, no. 9, pp. 3380-3387, Aug. 1971.
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(1971)
J. Appl. Phys.
, vol.42
, Issue.9
, pp. 3380-3387
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Anthony, T.R.1
Cline, H.E.2
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18
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0015287044
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Effects of the magnitude crystallographic direction of a thermal gradient on droplet migration in solids
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Jan.
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H. E. Cline and T. R. Anthony, “Effects of the magnitude crystallographic direction of a thermal gradient on droplet migration in solids,” J. Appl. Phys., vol. 43, no. 1, pp. 10-15, Jan. 1972.
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(1972)
J. Appl. Phys.
, vol.43
, Issue.1
, pp. 10-15
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Cline, H.E.1
Anthony, T.R.2
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19
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0016964521
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High-speed droplet migration in silicon
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June
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T. R. Anthony and H. E. Cline, “High-speed droplet migration in silicon,” J. Appl. Phys., vol. 47, no. 6, pp. 2325-2331, June 1976.
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(1976)
J. Appl. Phys.
, vol.47
, Issue.6
, pp. 2325-2331
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Anthony, T.R.1
Cline, H.E.2
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23
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0001059915
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On etching very narrow grooves in silicon
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Feb.
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D. L. Kendall, “On etching very narrow grooves in silicon,” Appl. Phys. Lett., vol. 26, no. 4, pp. 135-138, Feb. 1975.
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(1975)
Appl. Phys. Lett.
, vol.26
, Issue.4
, pp. 135-138
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Kendall, D.L.1
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24
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84975413933
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A water-amine-complexing agent system for etching silicon
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Sept.
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R. M. Finne and D. L. Klein, “A water-amine-complexing agent system for etching silicon,” J. Electrochem. Soc, vol. 114, pp. 965-970, Sept. 1967.
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(1967)
J. Electrochem. Soc
, vol.114
, pp. 965-970
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Finne, R.M.1
Klein, D.L.2
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25
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0018737935
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The S13N4/S1 ion-sensitive semiconductor electrode
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this issue
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I. Lauks and J. N. Zemel, “The S13N4/S1 ion-sensitive semiconductor electrode,” this issue, pp. 1959-1964.
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-
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Lauks, I.1
Zemel, J.N.2
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26
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84939397572
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pH measurements using polarizable electrodes
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this issue
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I. Lauks, “pH measurements using polarizable electrodes,” this issue, pp. 1952-1959.
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Lauks, I.1
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27
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84939399231
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Dependence of turn-on voltage and surface-state density on the silicon crystallographic orientations
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to be published
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C. C. Wen and J. N. Zemel, “Dependence of turn-on voltage and surface-state density on the silicon crystallographic orientations,” to be published.
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-
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Wen, C.C.1
Zemel, J.N.2
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