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Volumn 26, Issue 12, 1979, Pages 1945-1951

Gate-Controlled Diodes for lonic Concentration Measurement

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES;

EID: 0018738658     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1979.19800     Document Type: Article
Times cited : (39)

References (27)
  • 1
    • 0014698380 scopus 로고
    • Development of an ion-sensitive solid state device for neurophysiological measurements
    • Jan.
    • P. Bergveld, “Development of an ion-sensitive solid state device for neurophysiological measurements,” IEEE Trans. Biomed. Eng., vol. BME-17, pp. 70-71, Jan. 1970.
    • (1970) IEEE Trans. Biomed. Eng. , vol.BME-17 , pp. 70-71
    • Bergveld, P.1
  • 2
    • 0016972690 scopus 로고
    • Chemically sensitive field effect transistors
    • July
    • J. Janata and D. Moss, “Chemically sensitive field effect transistors,” IEEE Trans. Biomed. Eng., vol. BME-23, pp. 241-245, July 1976.
    • (1976) IEEE Trans. Biomed. Eng. , vol.BME-23 , pp. 241-245
    • Janata, J.1    Moss, D.2
  • 3
    • 0016125184 scopus 로고
    • An integrated field effect electrode for biopotential recording
    • Nov.
    • T. Matsuo and K. Wise, “An integrated field effect electrode for biopotential recording,” IEEE Trans. Biomed. Eng., vol. BME-21, pp. 485187, Nov. 1974.
    • (1974) IEEE Trans. Biomed. Eng. , vol.BME-21 , pp. 485187
    • Matsuo, T.1    Wise, K.2
  • 4
    • 0015388173 scopus 로고
    • Development, operation and application of the ion-sensitive field-effect transistor as a tool for electrophysiology
    • Sept.
    • P. Bergveld, “Development, operation and application of the ion-sensitive field-effect transistor as a tool for electrophysiology,” IEEE Trans. Biomed. Eng., vol. BME-19, pp. 342-351, Sept. 1972.
    • (1972) IEEE Trans. Biomed. Eng. , vol.BME-19 , pp. 342-351
    • Bergveld, P.1
  • 5
    • 0017101877 scopus 로고
    • Extracellular potential recording by means of a field effect transistor without gate metal, called OSFET
    • Mar.
    • P. Bergveld, J. Wiersma, and H. Meertens, “Extracellular potential recording by means of a field effect transistor without gate metal, called OSFET,” IEEE Trans. Biomed. Eng., vol. BME-23, pp. 136-144, Mar. 1976.
    • (1976) IEEE Trans. Biomed. Eng. , vol.BME-23 , pp. 136-144
    • Bergveld, P.1    Wiersma, J.2    Meertens, H.3
  • 6
    • 0016573664 scopus 로고
    • Potassium ion-sensitive field effect transistor
    • Nov.
    • S. D. Moss, J. Janata, and C. C. Johnson, “Potassium ion-sensitive field effect transistor,” Anal. Chem., vol. 47, pp. 2238-2243, Nov. 1975.
    • (1975) Anal. Chem. , vol.47 , pp. 2238-2243
    • Moss, S.D.1    Janata, J.2    Johnson, C.C.3
  • 7
    • 33847802082 scopus 로고
    • Ion-sensitive field effect transistors and related devices
    • Feb.
    • J. N. Zemel, “Ion-sensitive field effect transistors and related devices,” Anal. Chem., vol. 47, no. 2, pp. 255A-268A, Feb. 1975.
    • (1975) Anal. Chem. , vol.47 , Issue.2 , pp. 255A-268A
    • Zemel, J.N.1
  • 8
    • 84914440074 scopus 로고
    • Chemically sensitive semiconductor devices
    • Apr.
    • “Chemically sensitive semiconductor devices,” Res./Devel., vol. 28, no. 4, pp. 38-44, Apr. 1977.
    • (1977) Res./Devel. , vol.28 , Issue.4 , pp. 38-44
  • 9
    • 0018200086 scopus 로고
    • Integrated micro multi ion sensor using field effect of semiconductor
    • Mar.
    • M. Esashi and T. Matsuo, “Integrated micro multi ion sensor using field effect of semiconductor,” IEEE Trans. Biomed. Eng., vol. BME-25, pp. 184-192, Mar. 1978.
    • (1978) IEEE Trans. Biomed. Eng. , vol.BME-25 , pp. 184-192
    • Esashi, M.1    Matsuo, T.2
  • 10
    • 0018103328 scopus 로고
    • Physical mechanisms for chemically sensitive semiconductor devices
    • June
    • P. Bergveld, N. F. DeRooiu, and J. N. Zemel, “Physical mechanisms for chemically sensitive semiconductor devices,” Nature, vol. 273, no. 5662, pp. 438-443, June 1978.
    • (1978) Nature , vol.273 , Issue.5662 , pp. 438-443
    • Bergveld, P.1    DeRooiu, N.F.2    Zemel, J.N.3
  • 11
    • 84939352034 scopus 로고    scopus 로고
    • The potential at blocked electrodes
    • in preparation
    • I. Lauks and J. N. Zemel, “The potential at blocked electrodes,” in preparation.
    • Lauks, I.1    Zemel, J.N.2
  • 12
    • 0039907248 scopus 로고
    • Field effect potentiometric sensors
    • R. P. Buck and D. E. Hackleman, “Field effect potentiometric sensors,” Anal. Chem., vol. 43, p. 2315, 1977.
    • (1977) Anal. Chem. , vol.43 , pp. 2315
    • Buck, R.P.1    Hackleman, D.E.2
  • 13
    • 84939396228 scopus 로고
    • The chemically sensitive semiconductor device
    • Dec.
    • J. N. Zemel, “The chemically sensitive semiconductor device,” in Proc. 7th Technicon Int. Congr., pp. 68-74, Dec. 1976.
    • (1976) Proc. 7th Technicon Int. Congr. , pp. 68-74
    • Zemel, J.N.1
  • 14
    • 84939377069 scopus 로고
    • Geometric effects on the gate controlled capacitor
    • Ph.D. dissertation, The Moore School of Electrical Engineering, University of Pennsylvania, Philadelphia, Aug.
    • E. Slutsky, “Geometric effects on the gate controlled capacitor,” Ph.D. dissertation, The Moore School of Electrical Engineering, University of Pennsylvania, Philadelphia, Aug. 1978.
    • (1978)
    • Slutsky, E.1
  • 15
    • 84939355676 scopus 로고
    • A simple characterization of gate-to-substrate impedance in metal-oxide-semiconductor structure under non-equilibrium conditions
    • Solid State Electronics Lab., Stamford Univ., Stamford, CA, Tech. Rep. 4825-2, SU-SEL-68-093, Office of Naval Research Contract, NONR-225(44), NR 375865, Dec.
    • K. W. Andres, “A simple characterization of gate-to-substrate impedance in metal-oxide-semiconductor structure under non-equilibrium conditions,” Solid State Electronics Lab., Stamford Univ., Stamford, CA, Tech. Rep. 4825-2, SU-SEL-68-093, Office of Naval Research Contract, NONR-225(44), NR 375865, Dec. 1968.
    • (1968)
    • Andres, K.W.1
  • 16
    • 84939358438 scopus 로고
    • U.S. Patent 4 103 227, July
    • J. N. Zemel, U.S. Patent 4 103 227, July 1978.
    • (1978)
    • Zemel, J.N.1
  • 17
    • 0015112807 scopus 로고
    • Thermal migration of liquid droplets through solids
    • Aug.
    • T. R. Anthony and H. E. Cline, “Thermal migration of liquid droplets through solids,” J. Appl. Phys., vol. 42, no. 9, pp. 3380-3387, Aug. 1971.
    • (1971) J. Appl. Phys. , vol.42 , Issue.9 , pp. 3380-3387
    • Anthony, T.R.1    Cline, H.E.2
  • 18
    • 0015287044 scopus 로고
    • Effects of the magnitude crystallographic direction of a thermal gradient on droplet migration in solids
    • Jan.
    • H. E. Cline and T. R. Anthony, “Effects of the magnitude crystallographic direction of a thermal gradient on droplet migration in solids,” J. Appl. Phys., vol. 43, no. 1, pp. 10-15, Jan. 1972.
    • (1972) J. Appl. Phys. , vol.43 , Issue.1 , pp. 10-15
    • Cline, H.E.1    Anthony, T.R.2
  • 19
    • 0016964521 scopus 로고
    • High-speed droplet migration in silicon
    • June
    • T. R. Anthony and H. E. Cline, “High-speed droplet migration in silicon,” J. Appl. Phys., vol. 47, no. 6, pp. 2325-2331, June 1976.
    • (1976) J. Appl. Phys. , vol.47 , Issue.6 , pp. 2325-2331
    • Anthony, T.R.1    Cline, H.E.2
  • 23
    • 0001059915 scopus 로고
    • On etching very narrow grooves in silicon
    • Feb.
    • D. L. Kendall, “On etching very narrow grooves in silicon,” Appl. Phys. Lett., vol. 26, no. 4, pp. 135-138, Feb. 1975.
    • (1975) Appl. Phys. Lett. , vol.26 , Issue.4 , pp. 135-138
    • Kendall, D.L.1
  • 24
    • 84975413933 scopus 로고
    • A water-amine-complexing agent system for etching silicon
    • Sept.
    • R. M. Finne and D. L. Klein, “A water-amine-complexing agent system for etching silicon,” J. Electrochem. Soc, vol. 114, pp. 965-970, Sept. 1967.
    • (1967) J. Electrochem. Soc , vol.114 , pp. 965-970
    • Finne, R.M.1    Klein, D.L.2
  • 25
    • 0018737935 scopus 로고    scopus 로고
    • The S13N4/S1 ion-sensitive semiconductor electrode
    • this issue
    • I. Lauks and J. N. Zemel, “The S13N4/S1 ion-sensitive semiconductor electrode,” this issue, pp. 1959-1964.
    • Lauks, I.1    Zemel, J.N.2
  • 26
    • 84939397572 scopus 로고    scopus 로고
    • pH measurements using polarizable electrodes
    • this issue
    • I. Lauks, “pH measurements using polarizable electrodes,” this issue, pp. 1952-1959.
    • Lauks, I.1
  • 27
    • 84939399231 scopus 로고    scopus 로고
    • Dependence of turn-on voltage and surface-state density on the silicon crystallographic orientations
    • to be published
    • C. C. Wen and J. N. Zemel, “Dependence of turn-on voltage and surface-state density on the silicon crystallographic orientations,” to be published.
    • Wen, C.C.1    Zemel, J.N.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.