Excitonic emission in GaN films on AlN substrates using microwave-excited N plasma method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1424-1427

  Kai, Ayako ^a   Okada, Kiyohiko ^a   Yamada, Yoichi ^a   Taguchi, Tsunemasa ^a   Sasaki, Fumio ^b   Kobayashi, Shunsuke ^b   Tani, Toshiro ^b   Taniguchi, Hitofumi ^c  

^a YAMAGUCHI UNIVERSITY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c TOKUYAMA CORPORATION   (Japan)

Author keywords

AlN; Crystal growth; Free exciton; GaN; Photoluminescence; Plasma; Time resolved spectroscopy

Indexed keywords

CERAMIC MATERIALS; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; ELECTRON EMISSION; EXCITONS; LIGHT EMISSION; MICROWAVES; PHOTOLUMINESCENCE; PLASMAS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

ALUMINUM NITRIDE; FREE EXCITON RECOMBINATION; GALLIUM NITRIDE; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING FILMS;

EID: 0030078895     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1424     Document Type: Article

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