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Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 182-186

Improved thermal stability of ultrathin silicon oxynitride layer due to nitrogen incorporation at the interface

(3) Prabhakaran, Kuniyil a Kobayashi, Yoshihiro a Ogino, Toshio a

a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ANNEALING; AUGER ELECTRON SPECTROSCOPY; DESORPTION; INTERFACES (MATERIALS); NITROGEN OXIDES; SILICA; SILICON NITRIDE; SURFACE PHENOMENA; THERMODYNAMIC STABILITY; ULTRAVIOLET SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CLUSTERING PHENOMENON; OXYNITRIDATION;

ULTRATHIN FILMS;

EID: 0032097019 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(98)00047-6 Document Type: Article

Times cited : (12)

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