MOCVD grown InGaAs/GaAs vertical cavity surface emitting laser on GaAs (311)B substrate

Electronics Letters

Volumn 33, Issue 22, 1997, Pages 1877-1878

  Mizutani, A ^a   Hatori, N ^a   Nishiyama, N ^a   Koyama, F ^a   Iga, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Chemical vapour deposition; Vertical cavity surface emitting lasers

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; ELECTRIC RESISTANCE; LIGHT POLARIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES;

CARBON AUTO DOPING TECHNIQUE; COMPOSITIONAL GRADING LAYERS; DISTRIBUTED BRAGG REFLECTOR; VERTICAL CAVITY SURFACE EMITTING LASERS;

QUANTUM WELL LASERS;

EID: 0031249975     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971285     Document Type: Article

References (6)

1. OHTOSHI, T., KURODA, T., NIWA, A., and TSUJI, S.: 'Dependence of optical gain on crystal orientation in surface-emitting lasers with strained quantum wells', Appl. Phys. Lett., 1994, 65, (15), pp. 1886-1887
2. KANEKO, Y., NAKAGAWA, S., TAKEUCHI, T., MARS, D.E., YAMADA, N., and MIKOSHIBA, N.: 'InGaAs/GaAs vertical-cavity surface-emitting lasers on (311)B GaAs substrate', Electron. Lett., 1995, 31, pp. 805-806
3. TAKAHASHI, M., VACCARO, P., FUJITA, K., WATANABE, T., MUKAIHARA, T., KOYAMA, F., and IGA, K.: 'An InGaAs-GaAs vertical-cavity surface-emitting laser grown on GaAs(311)A substrate having low threshold and stable polarisation', IEEE Photonics Technol. Lett., 1996, 8, (6), pp. 737-739
4. TATENO, K., OHISO, Y., AMANO, C., WAKATSUKI, A., and KUROKAWA, T.: 'Growth of vertical-cavity surface-emitting laser structures on GaAs (311)B substrates by metalorganic chemical vapour deposition', Appl. Phys. Lett., 1997, 70, (25), pp. 3395-3397
5. MIZUTANI, A., HATORI, N., OHNOKI, N., NISHIYAMA, N., OHTAKE, N., KOYAMA, F., and IGA, K.: 'P-type AlAs growth on GaAs (311)B substrate using carbon auto-doping for low resistance GaAs/AlAs distributed Bragg reflector', to be published in Jpn. J. Appl. Phys.,
6. HATORI, N., MIZUTANI, A., NISHIYAMA, N., MIYAMOTO, T., KOYAMA, F., and IGA, K.: 'A highly conductive GaAs/AlAs distributed Bragg reflector for surface-emitting lasers by carbon auto doping in MOCVD growth'. EW. MOVPE VII Ex. Abst., 1997, H8