P-type AlAs growth on a GaAs (311)B substrate using carbon auto-doping for low resistance GaAs/AlAs distributed Bragg reflectors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 11, 1997, Pages 6728-6729

  Mizutani, Akimasa ^a   Hatori, Nobuaki ^a   Ohnoki, Noriyuki ^a   Nishiyama, Nobuhiko ^a   Ohtake, Nobuyuki ^a   Koyama, Fumio ^a   Iga, Kenichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR LASERS; SUBSTRATES;

AUTO DOPING TECHNIQUE; DISTRIBUTED BRAGG REFLECTORS (DBR); VERTICAL CAVITY SURFACE EMITTING LAYERS (VCSEL);

SEMICONDUCTING FILMS;

EID: 0031274335     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6728     Document Type: Article

References (9)

1. T. Ohtoshi, T. Kuroda, N. Niwa and S. Tsuji: Appl. Phys. Lett. 65 (1994) 1886.
2. R. Nötzel, J. Temmyo and T. Tamamura: Nature 369 (1994) 131.
3. K. Nishi, R. Mirin, D. Leonard, G. Medeiros-Rigbeiro, P. M. Petroff and A. C. Gossard: J. Appl. Phys. 80 (1996) 3466.
4. M. Kondo and T. Tanahashi: J. Cryst. Growth 145 (1994) 390.
5. H. Maekawa, T. Mukaihara, Y. Hayashi, N. Ohnoki, T. Tamanuki, F. Koyama and K. Iga: Conf. Dig. Int. Conf. Metalorganic Vapor Phase Epitaxy (ICMOVPE VII) (1994) No. P3-7, p. 278.
6. G. Reiner, E. Zeeb, B. Möler, M. Ries and K. J. Ebeling: IEEE Photon. Technol. Lett. 7 (1995) 730.
7. B. Weigl, M. Grabherr, R. Jäger, G. Reiner and K. J. Ebeling: Conf. Dig. 15th IEEE Int. Semiconductor Laser Conf. (1996) PDP2.
8. S. Sekiguchi, T. Miyamoto, F. Koyama and K. Iga: Jpn. J. Appl. Phys. 36 (1997) 2638.
9. N. Hatori, A. Mizutani, N. Nishiyama, T. Miyamoto, F. Koyama and K. Iga: Conf. Dig. Euaropian Workshop on Metalorganic Vaper Phase Epitaxy (EWMOVPE VII) (1997) H8.