High-power high-efficiency quasi-CW Sb-based mid-IR lasers using 1.9-μm laser diode pumping

IEEE Photonics Technology Letters

Volumn 10, Issue 5, 1998, Pages 663-665

  Le, H Q ^a   Turner, G W ^a   Ochoa, J R ^a  

^a MIT LINCOLN LABORATORY   (United States)

Author keywords

Diode pumping; Laser efficiency; Mid infrared lasers; Narrow gap semiconductors; Optical pumping; Semiconductor lasers

Indexed keywords

CONTINUOUS WAVE LASERS; ENERGY EFFICIENCY; OPTICAL PUMPING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

DIODE PUMPING; LASER EFFICIENCY; MID INFRARED LASERS; NARROW GAP SEMICONDUCTORS;

SEMICONDUCTOR LASERS;

EID: 0032075319     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.669237     Document Type: Article

References (14)

1. H. Q. Le, G. W. Turner, V. Daneu, J. R. Ochoa, H. K. Choi, A. Sanchez, D. L. Spears, and T. Y. Fan, unpublished.
2. H. Q. Le, G. W. Turner, H. K. Choi, J. R. Ochoa, A. Sanchez, J. M. Arias, M. Zandian, R. R. Zucca, and Y.-Z. Liu, "High-power diode-pumped mid-infrared semiconductor lasers," Proc. SPIE, vol. 2382, pp. 262-272, 1995.
3. H. Q. Le, G. W. Turner, and J. R. Ochoa, "A turnkey liquid-nitrogen-cooled 3.9-μm semiconductor laser package with 0.2-W CW output," Electron. Lett., vol. 32, pp. 2359-2360, 1996.
4. H. Q. Le, unpublished.
5. H. Q. Le, G. W. Turner, J. R. Ochoa, and A. Sanchez, "High-efficiency, high-temperature mid-infrared (λ ≥ 4 μm) InAsSb/GaSb lasers," Electron. Lett., vol. 28, pp. 1944-1945, 1994.
6. H. K. Choi, G. W. Turner, and M. J. Manfra, "High CW power (>200 mW/facet) at 3.4 μm from InAsSb/InAlAsSb strained quantum well diode lasers," Electron. Lett., vol. 32, pp. 1296-1297, 1996.
7. J. L. Malin, J. R. Meyer, C. L. Felix, C. A. Hoffman, L. Goldberg, F. J. Bartoli, C.-H. Lin, P. C. Chang, S. J. Murry, R. Q. Yang, and S.-S. Pei, "Type-II mid-infrared quantum well lasers," Appl. Phys. Lett., vol. 68, pp. 2976-2978, 1996.
8. J. Faist, F. Capasso, C. Sirtori, A. L. Hutchinson, D. L. Sivco, J. N. Baillargeon, A. L. Hutchinson, S.-N. G. Chu, and A. Y. Cho, "High power mid-infrared (λ ∼ 5 μm) quantum cascade lasers operating above room-temperature," Appl. Phys. Lett., vol. 68, pp. 3680-3682, 1996.
9. A. Popov, V. Sherstnev, Y. Yakovlev, R. Mucke, and P. Werle, "High power InAsSb/InAsSbP double heterostructure laser for continuous wave operation at 3.6 μm," Appl. Phys. Lett., vol. 68, pp. 2790-2792, 1996.
10. xSb/InAs superlattice diode laser," Electron. Lett., vol. 31, pp. 275-276 1995.
11. R. Q. Yang, B. H. Yang, D. Zhang, C. H. Lin, S. J. Murry, H. Wu, and S. S. Pei, "High power mid-IR interband cascade lasers based on type-II quantum wells," Appl. Phys. Lett., to be published.
12. J. Diaz, H. Yi, A. Rybaltowski, B. Lane, G. Lucas, D. Wu, S. Kim, M. Erdtmann, E. Kaas, and M. Razeghi, "InAsSbP/InAsSb/InAs laser diodes (λ = 3.2 μm) grown by low-pressure metal-organic chemical vapor deposition," Appl. Phys. Lett., vol. 70, pp. 40-42, 1997.
13. M. G. Holland, "Thermal conductivity;" in Semiconductor and Semimetals, vol. 2, R. K. Willardson and A. C. Beer, Eds. New York: Academic, 1966, pp. 3-31.
14. U. Piesbergen, "Heat capacity and Debye temperature," in Semiconductor and Semimetals, vol. 2, R. K. Willardson and A. C. Beer, Eds. New York: Academic, 1966, pp. 49-60.