Characteristics of trenched coplanar waveguide for high-resistivity si mmic applications

IEEE Transactions on Microwave Theory and Techniques

Volumn 46, Issue 5 PART 2, 1998, Pages 623-631

  Yang, Suidong ^a   Hu, Zhirun ^b   Buchanan, Neil B ^a   Fusco, Vincent F ^a   Carson Stewart, J A ^b   Wu, Yunhong ^a   Mervyn Armstrong, B ^a   Armstrong, G A ^b   Gamble, Harold S ^a  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

^b GEC Marconi Instruments   (United Kingdom)

Author keywords

Capacitance; Conductance; CPW; Loss; MMIC

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC LINES; ELECTRIC LOSSES; ELECTRIC RESISTANCE; FINITE ELEMENT METHOD; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

HIGH RESISTIVITY SILICON (HRS); TRENCHED COPLANAR WAVEGUIDES;

WAVEGUIDES;

EID: 0032074585     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.668674     Document Type: Article

References (14)

1. A. Rosen étal, "Silicon as a millimeter-wave monolithically integrated substrate-A new look," RCA Rev., vol. 42, pp. 633-660, 1981.
2. J. Bruechler et al, "Silicon high-resistivity-substrate millimeter-wave technology," IEEE Trans. Microwave Theory Tech.. vol. MTT34, pp. 1516-1521, Dec. 1986.
3. J. Stewart, "Silicon interconnects for high frequency circuit," in IEEE Int. Conf. Commun. Syst.. Singapore, Nov. 1996, pp. 1562-1566.
4. A. C. Reyes, S. M. E. Ghazaly, and S. J. Dorn et ai. "Coplanar waveguides and microwave inductors on silicon substrates," IEEE Tran. Microwave Theory Tech.. vol. 43, pp. 2016-2022, Sept. 1995.
5. T. Tokumitsu et al.. "3-dimensional MMIC technology-A possible solution to masterslice MMIC on GaAs and Si," IEEE microwave Guided Wave Lett., vol. 5, pp. 411-113, Nov. 1995.
6. A. Schuppen and U. Erben étal.. "Enhanced SiGe heterojunction bipolar transistors with 160 GHz-Fmax," in IEDM. Washington, DC, Dec. 1995, pp. 743-746.
7. J. N. Burghartz, M. Soyuer, and K. A. Jenkins et al, "Integrated RF components in a SiGe bipolar technology," IEEE J. Solid-State Circuits, vol. 32, pp. 1440-1445, Sept. 1997.
8. R. Groves, D. L. Harame, and D. Jadus, "Temperature dependence of Q and inductance in spiral inductors fabricated in a SiGe/BiCMOS technology," IEEE Solid-State Circuits, vol. 32, pp. 1455-1459, Sept. 1997.
9. K. C. Gupta et al., Microstrip lines and Slotlines. Norwood, MA: Artech House, 1979, p. 7.
10. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981, p. 245.
11. A. S. Grove, Physics and Technology of Semiconductor Device. New York: Wiley, 1967, pp. 113, 163.
12. S. E. Laux, "Techniques for small-signal analysis of semiconductor devices," IEEE Trans. Electron Devices, vol. ED32, pp. 2028-2037, Oct. 1985.
13. R. E. Collin, Foundations for Microwave Engineering. New York: McGraw-Hill, 1992, p. 88.
14. V. F. Fusco and Z. R. Hu et al., "Silicon interconnect for millimeter wave circuit," in Proc. 25th European Microwave Conf., Bologna, Italy, Sept. 1995, pp. 467-69.