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Volumn 34, Issue 12, 1986, Pages 1516-1521

Silicon High-Resistivity-Substrate Millimeter-Wave Technology

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Indexed keywords


EID: 0000092929     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1986.1133572     Document Type: Article
Times cited : (68)

References (10)
  • 1
    • 0019689846 scopus 로고
    • Silicon as a millimeter-wave monolithically integrated substrate—A new look
    • Dec.
    • A. Rosen et. al., “Silicon as a millimeter-wave monolithically integrated substrate—A new look,” RCA Rev. vol. 42, pp. 633–660, Dec. 1981.
    • (1981) RCA Rev. , vol.42 , pp. 633-660
    • Rosen, A.1
  • 2
    • 36049011182 scopus 로고
    • Optimization of diode structures for monolithic integrated microwave circuits
    • June
    • B. W. Battershall and S. D. Emmons, “Optimization of diode structures for monolithic integrated microwave circuits,” IEEE J. Solid-State Circuits, vol. SC-3, pp. 107–112, June 1968.
    • (1968) IEEE J. Solid-State Circuits , vol.SC-3 , pp. 107-112
    • Battershall, B.W.1    Emmons, S.D.2
  • 3
    • 0021583363 scopus 로고
    • A silicon technology for millimeter-wave monolithic circuits
    • Dec.
    • P. J. Stabile and A. Rosen, “A silicon technology for millimeter-wave monolithic circuits,” RCA Rev., vol. 45, pp. 587–605, Dec. 1984.
    • (1984) RCA Rev. , vol.45 , pp. 587-605
    • Stabile, P.J.1    Rosen, A.2
  • 4
    • 0022146341 scopus 로고
    • High speed integrated circuit using silicon molecular beam epitaxy (SI-MBE)
    • Oct.
    • E. Kasper and K. Wörner, “High speed integrated circuit using silicon molecular beam epitaxy (SI-MBE),” J. Electrochem. Soc., vol. 132, no. 10, pp. 2481–2486, Oct. 1985.
    • (1985) J. Electrochem. Soc. , vol.132 , Issue.10 , pp. 2481-2486
    • Kasper, E.1    Wörner, K.2
  • 5
    • 0022983725 scopus 로고
    • Stress compensated Si-membrane masks for X-ray lithography with synchrotron radiation
    • (Paris), Apr. 21-23, paper AI.4
    • K. M. Strohm, J. Hersener, and H. J. Herzog, “Stress compensated Si-membrane masks for X-ray lithography with synchrotron radiation,” in Eurocon '86 Proc. (Paris), Apr. 21-23, 1986, paper AI.4.
    • (1986) Eurocon '86 Proc.
    • Strohm, K.M.1    Hersener, J.2    Herzog, H.J.3
  • 6
    • 0021694598 scopus 로고
    • Determination of diffusion characteristics using two-and four point probe measurements
    • Dec.
    • R. Brennan, “Determination of diffusion characteristics using two-and four point probe measurements,” Solid State Technol., pp. 127-132, Dec. 1984.
    • (1984) Solid State Technol , pp. 127-132
    • Brennan, R.1
  • 7
    • 0020719434 scopus 로고
    • Arguments and an accurate model for the power-current formulation of microstrip characteristic impedance
    • Mar.
    • R. H. Jansen and M. Kirschning, “Arguments and an accurate model for the power-current formulation of microstrip characteristic impedance,” Arch. Elek., Übertragung, vol. 37, pp. 108-112, Mar. 1983.
    • (1983) Arch. Elek., Übertragung , vol.37 , pp. 108-112
    • Jansen, R.H.1    Kirschning, M.2
  • 9
    • 0019874182 scopus 로고
    • Microstrip IMPATT-diode oscillator for 100 GHz
    • Aug.
    • G. B. Morgan, “Microstrip IMPATT-diode oscillator for 100 GHz,” Electron. Lett., vol. 17, no. 16, pp. 570-571, Aug. 1981.
    • (1981) Electron. Lett. , vol.17 , Issue.16 , pp. 570-571
    • Morgan, G.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.