Degradation of II-VI blue-green semiconductor lasers

IEEE Journal of Quantum Electronics

Volumn 34, Issue 5, 1998, Pages 851-857

  Chuang, Shun Lien ^{a,b,c,d,e,f,g}   Nakayama, Norikazu ^c,h   Ishibashi, Akira ^a,c,f,i   Taniguchi, Satoshi ^c,j   Nakano, Kazushi ^c,i,k  

^a IEEE   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c SONY CORPORATION   (Japan)

^d NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^e MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^f University of Illinois at Urbana Champaign   (United States)

^g LUCENT TECHNOLOGIES   (United States)

^h UNIVERSITY OF TOYAMA   (Japan)

ⁱ UNIVERSITY OF TOKYO   (Japan)

^j KYOTO UNIVERSITY   (Japan)

^k UNIVERSITY OF EAST ANGLIA   (United Kingdom)

more..

Author keywords

Defect physics; Device degradation; Semiconductor lasers; Visible lasers

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CURRENTS; ELECTRONS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

BLUE GREEN SEMICONDUCTOR LASERS; ELECTRON HOLE RECOMBINATION;

SEMICONDUCTOR LASERS;

EID: 0032072377     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.668773     Document Type: Article

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