Characteristics of self-assembled InSb dots grown on (100) AlGaSb by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 5 A, 1998, Pages 2455-2459

  Yano, Mitsuaki ^a   Seki, Yoshitaka ^a   Ohkawa, Hiroyuki ^a   Koike, Kazuto ^a   Sasa, Shigehiko ^a   Inoue, Masataka ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AFM; InSb; MBE; PL; Quantum dot; Raman; Self assembled growth

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

SELF-ASSEMBLED GROWTH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032068594     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.2455     Document Type: Article

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