Self-organized molecular beam epitaxial growth of the InSb/AlGaSb quantum dots on high-index GaAs substrates

Materials Research Society Symposium - Proceedings

Volumn 448, Issue , 1997, Pages 193-198

  Yano, Mitsuaki ^a   Koike, Kazuto ^a   Inoue, Masataka ^a   Saitoh, Toshiya ^a   Yoh, Kanji ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRONIC STRUCTURE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

SEMICONDUCTING ALUMINUM GALLIUM ANTIMONIDE; SEMICONDUCTING INDIUM ANTIMONIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030679421     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)