Growth of microcrystalline silicon using the layer-by-layer technique at various plasma excitation frequencies

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 2, 1998, Pages 866-870

  Vetterl, O ^a   Hapke, P ^a   Finger, F ^a   Houben, L ^a   Luysberg, M ^a   Wagner, H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Layer by layer; Microcrystalline silicon; TEM

Indexed keywords

AMORPHOUS FILMS; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; HYDROGEN; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

MICROCRYSTALLINE SILICON; PLASMA EXCITATION FREQUENCIES;

SEMICONDUCTING SILICON;

EID: 0032065122     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00198-7     Document Type: Article

References (9)

1. F. Finger, R. Carius, P. Hapke, L. Houben, M. Luysberg, M. Tzolov, Mater. Res. Soc. Proc. 452 (1997) 725.
2. M. Luysberg, P. Hapke, R. Carius, F. Finger, Phil. Mag. A 75 (1997) 31.
3. P. Hapke, F. Finger, J. Non-Cryst. Solids 227-230 (1998) 861.
4. A. Asano, Appl. Phys. Lett. 56 (1990) 533.
5. D. He, S. Ishihara, I. Shimizu, Jpn. J. Appl. Phys. 32 (1993) 3370.
6. P. Hapke, R. Carius, F. Finger, A. Lambertz, O. Vetterl, H. Wagner, Mater. Res. Soc. Proc. 452 (1997) 727.
7. H. Curtins, N. Wyrsch, M. Favre, A. Shah, Plasma Chem. Plasma Processing 7 (1987) 267.
8. O. Vetterl, Diploma Thesis, University of Düsseldorf, Germany, 1997.
9. L. Houben, M. Luysberg, P. Hapke, O. Vetterl, F. Finger, R. Carius, H. Wagner, J. Non-Cryst. Solids 227-230 (1998) 896.