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Volumn 227-230, Issue PART 2, 1998, Pages 896-900
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Morphological and crystallographic defect properties of microcrystalline silicon: A comparison between different growth modes
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Author keywords
Layer by layer growth; Microcrystalline silicon; Plasma enhanced chemical vapour deposition
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
CRYSTAL DEFECTS;
CRYSTAL ORIENTATION;
CRYSTALLINE MATERIALS;
EPITAXIAL GROWTH;
GRAIN SIZE AND SHAPE;
MORPHOLOGY;
NUCLEATION;
SEMICONDUCTING FILMS;
SEMICONDUCTOR GROWTH;
THIN FILMS;
TRANSMISSION ELECTRON MICROSCOPY;
MICROCRYSTALLINE SILICON;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);
SEMICONDUCTING SILICON;
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EID: 0032067244
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-3093(98)00239-7 Document Type: Article |
Times cited : (9)
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References (15)
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