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Volumn 227-230, Issue PART 2, 1998, Pages 896-900

Morphological and crystallographic defect properties of microcrystalline silicon: A comparison between different growth modes

Author keywords

Layer by layer growth; Microcrystalline silicon; Plasma enhanced chemical vapour deposition

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; GRAIN SIZE AND SHAPE; MORPHOLOGY; NUCLEATION; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0032067244     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00239-7     Document Type: Article
Times cited : (9)

References (15)
  • 11
    • 0003038256 scopus 로고
    • H. Fritzsche (Ed.), World Scientific Publishing, Singapore
    • C.C. Tsai, in: H. Fritzsche (Ed.), Amorphous Silicon and Related Materials. World Scientific Publishing, Singapore, 1988, 123.
    • (1988) Amorphous Silicon and Related Materials , pp. 123
    • Tsai, C.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.