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Volumn 227-230, Issue PART 2, 1998, Pages 1277-1281
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Limited influence of grain boundary defects in hot-wire CVD polysilicon films on solar cell performance
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Author keywords
Grain boundary defects; Poly Si:H films; Solar cell
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Indexed keywords
CARRIER CONCENTRATION;
CHEMICAL VAPOR DEPOSITION;
ELECTRON SPIN RESONANCE SPECTROSCOPY;
GRAIN BOUNDARIES;
INFRARED SPECTROSCOPY;
PHOTOCONDUCTIVITY;
SEMICONDUCTING POLYMERS;
SEMICONDUCTING SILICON;
SOLAR CELLS;
THERMAL EFFECTS;
DANGLING BOND RESONANCE;
DUAL BEAM PHOTOCONDUCTIVITY;
HEISENBERG EXCHANGE;
PHOTOTHERMAL DEFLECTION SPECTROSCOPY;
SEMICONDUCTING FILMS;
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EID: 0032064297
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-3093(98)00302-0 Document Type: Article |
Times cited : (12)
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References (14)
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