Ellipsometric study of tellurium molecular beam interaction with dehydrogenated vicinal silicon surfaces

Thin Solid Films

Volumn 313-314, Issue , 1998, Pages 561-564

  Shvets, V A ^a   Chikichev, S I ^a   Pridachin, D N ^a   Yakushev, M V ^a   Sidorov, Yu G ^a   Mardezhov, A S ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Condensation; Ellipsometry; Silicon surface; Tellurium

Indexed keywords

CONDENSATION; DEHYDROGENATION; DEPOSITION; ELLIPSOMETRY; MOLECULAR BEAMS; NUCLEATION; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

DEHYDROGENATED VICINAL SILICON SURFACES; SINGLE WAVELENGTH ELLIPSOMETRY;

SEMICONDUCTING TELLURIUM;

EID: 0031998573     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00884-5     Document Type: Article

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