-
1
-
-
0030568376
-
A pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 μm
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S.R. Kurtz, R.M. Biefeld, A.A. Allerman, A.J. Howard, M.H. Crawford, M.W. Pelczynski, A pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 μm, Appl. Phys. Lett. 68 (1996) 1332-1334.
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 1332-1334
-
-
Kurtz, S.R.1
Biefeld, R.M.2
Allerman, A.A.3
Howard, A.J.4
Crawford, M.H.5
Pelczynski, M.W.6
-
2
-
-
0029342775
-
InAsSb/InAlAsSb strained quantum-well diode lasers emitting at 3.9 μm
-
H.K. Choi, G.W. Turner, InAsSb/InAlAsSb strained quantum-well diode lasers emitting at 3.9 μm, Appl. Phys. Lett. 67 (1995) 332-334.
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 332-334
-
-
Choi, H.K.1
Turner, G.W.2
-
3
-
-
36449009126
-
Continuous wave operation of InAs/InAsSb midinfrared lasers
-
Y-H. Zhang, Continuous wave operation of InAs/InAsSb midinfrared lasers, Appl. Phys. Lett. 66 (1995) 118-120.
-
(1995)
Appl. Phys. Lett.
, vol.66
, pp. 118-120
-
-
Zhang, Y.-H.1
-
4
-
-
0000759851
-
The growth of n- and p-type Al(As)Sb by metal-organic chemical vapor deposition
-
R.M. Biefeld, A.A. Allerman, M.W. Pelczynski, The growth of n- and p-type Al(As)Sb by metal-organic chemical vapor deposition, Appl. Phys. Lett. 68 (1996) 932-934.
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 932-934
-
-
Biefeld, R.M.1
Allerman, A.A.2
Pelczynski, M.W.3
-
5
-
-
0028371887
-
Midwave (4 μm) infrared lasers and light-emitting diodes
-
S.R. Kurtz, R.M. Biefeld, L.R. Dawson, K.C. Baucom, A.J. Howard, Midwave (4 μm) infrared lasers and light-emitting diodes, Appl. Phys. Lett. 64 (1994) 812-814.
-
(1994)
Appl. Phys. Lett.
, vol.64
, pp. 812-814
-
-
Kurtz, S.R.1
Biefeld, R.M.2
Dawson, L.R.3
Baucom, K.C.4
Howard, A.J.5
-
6
-
-
0029635431
-
2.7 μm InGaAsSb/AlGaAsSb laser diodes with continuous-wave operation up to -39°C
-
D.Z. Garbuzov, R.U Martinelli, R.J. Menna, P.K. York, H. Lee, S.Y. Narayan, J.C. Connolly, 2.7 μm InGaAsSb/AlGaAsSb laser diodes with continuous-wave operation up to -39°C, Appl. Phys. Lett. 67 (1995) 1346-1348.
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 1346-1348
-
-
Garbuzov, D.Z.1
Martinelli, R.U.2
Menna, R.J.3
York, P.K.4
Lee, H.5
Narayan, S.Y.6
Connolly, J.C.7
-
7
-
-
0029483778
-
Mid-wave infrared diode lasers based on GaInSb/InAs and InAsAlSb superlattices
-
D.H. Chow, R.H. Miles, T.C. Hasenberg, A.R. Kost, Y.-H. Zhang, H.L. Dunlap, L. West, Mid-wave infrared diode lasers based on GaInSb/InAs and InAsAlSb superlattices, Appl. Phys. Lett. 67 (1995) 3700-3702.
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 3700-3702
-
-
Chow, D.H.1
Miles, R.H.2
Hasenberg, T.C.3
Kost, A.R.4
Zhang, Y.-H.5
Dunlap, H.L.6
West, L.7
-
8
-
-
0030142623
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175 K continuous wave operation of InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5 μm
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H.K. Choi, G.W. Turner, M.J. Manfra, M.K. Connors, 175 K continuous wave operation of InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5 μm, Appl. Phys. Lett. 68 (1996) 2936-2938.
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 2936-2938
-
-
Choi, H.K.1
Turner, G.W.2
Manfra, M.J.3
Connors, M.K.4
-
9
-
-
0345777094
-
Type II mid-infrared quantum well lasers
-
J.I. Malin, J.R. Meyer, C.L. Felix, et al., Type II mid-infrared quantum well lasers, Appl Phys. Lett. 68 (1996) 2976-2978.
-
(1996)
Appl Phys. Lett.
, vol.68
, pp. 2976-2978
-
-
Malin, J.I.1
Meyer, J.R.2
Felix, C.L.3
-
10
-
-
0030195953
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InAsSb-based mid-infrared lasers (3.8-3.9 μm) and light-emitting diodes with AlAsSb claddings and semi-metal electron injection grown by metal-organic chemical vapor deposition
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A.A. Allerman, R.M. Biefeld, S.R. Kurtz, InAsSb-based mid-infrared lasers (3.8-3.9 μm) and light-emitting diodes with AlAsSb claddings and semi-metal electron injection grown by metal-organic chemical vapor deposition, Appl. Phys. Lett. 69 (1996) 465-467.
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 465-467
-
-
Allerman, A.A.1
Biefeld, R.M.2
Kurtz, S.R.3
-
12
-
-
0029404143
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A magneto-optical determination of light-heavy hole splittings in As-rich InAsSb alloys and superlattices
-
S.R. Kurtz, R.M. Biefeld, A.J. Howard, A magneto-optical determination of light-heavy hole splittings in As-rich InAsSb alloys and superlattices, Appl. Phys. Lett. 67 (1995) 3331-3333.
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 3331-3333
-
-
Kurtz, S.R.1
Biefeld, R.M.2
Howard, A.J.3
-
13
-
-
0001206757
-
Electron auger processes in mid-infrared InAsSb/InGaAs heterostructrures
-
H.P. Hjalmarson, S.R. Kurtz, Electron auger processes in mid-infrared InAsSb/InGaAs heterostructrures, Appl. Phys. Lett. 69 (1996) 949-951.
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 949-951
-
-
Hjalmarson, H.P.1
Kurtz, S.R.2
-
14
-
-
21544464001
-
High power mid-infrared (λ ≈ 5 μm) quantum cascade lasers operating above room temperature
-
and references therein
-
J. Faist, F. Capasso, C. Sirtori, D.L. Sivco, J.N. Baillargeon, A.L. Hutchinson, S.N.G. Chung, A.Y. Cho, High power mid-infrared (λ ≈ 5 μm) quantum cascade lasers operating above room temperature, Appl. Phys. Lett. 68 (1996) 3680-3682, and references therein.
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 3680-3682
-
-
Faist, J.1
Capasso, F.2
Sirtori, C.3
Sivco, D.L.4
Baillargeon, J.N.5
Hutchinson, A.L.6
Chung, S.N.G.7
Cho, A.Y.8
-
15
-
-
0030214131
-
Mid-IR interband cascade electroluminescence in type-II quyantum wells
-
R.Q. Yang, C.-H. Lin, P.C. Chang, et al., Mid-IR interband cascade electroluminescence in type-II quyantum wells, Electron. Lett. 32 (1996) 1621-1622.
-
(1996)
Electron. Lett.
, vol.32
, pp. 1621-1622
-
-
Yang, R.Q.1
Lin, C.-H.2
Chang, P.C.3
-
16
-
-
0031096123
-
Quantum cascade light emitting diodes based on type-II quantum wells
-
C.-H. Lin, R.Q. Yang, D. Zhang, S.J. Murry, S.S. Pei, A.A. Allerman, S.R. Kurtz, Quantum cascade light emitting diodes based on type-II quantum wells, Electron. Lett. 33 (1997) 598-599.
-
(1997)
Electron. Lett.
, vol.33
, pp. 598-599
-
-
Lin, C.-H.1
Yang, R.Q.2
Zhang, D.3
Murry, S.J.4
Pei, S.S.5
Allerman, A.A.6
Kurtz, S.R.7
-
17
-
-
0028760310
-
x/InAs strained-layer superlattices by metal-organic chemical vapor deposition
-
x/InAs strained-layer superlattices by metal-organic chemical vapor deposition, J. Crystal Growth 137 (1994) 231-234.
-
(1994)
J. Crystal Growth
, vol.137
, pp. 231-234
-
-
Biefeld, R.M.1
Baucom, K.C.2
Kurtz, S.R.3
-
18
-
-
0022716939
-
The preparation of InSb and InAsSb by metalorganic chemical vapor deposition
-
R.M. Biefeld, The preparation of InSb and InAsSb by metalorganic chemical vapor deposition, J. Crystal Growth 75 (1986) 255-263.
-
(1986)
J. Crystal Growth
, vol.75
, pp. 255-263
-
-
Biefeld, R.M.1
-
20
-
-
36449005295
-
Magnetophotoluminescence of biaxially compressed InAsSb quantum wells
-
S.R. Kurtz, R.M. Biefeld, Magnetophotoluminescence of biaxially compressed InAsSb quantum wells, Appl. Phys. Lett. 66 (1995) 364-366.
-
(1995)
Appl. Phys. Lett.
, vol.66
, pp. 364-366
-
-
Kurtz, S.R.1
Biefeld, R.M.2
-
22
-
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0346959448
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note
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Our device was compared with a 4.2 μm LED obtained from RMC Ltd, Moscow, Russia.
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23
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0000292931
-
Band alignments and offsets is In(AsSb)/InAs superlattices
-
Y.B Li, D.J. Bain, L. Hart, et al., Band alignments and offsets is In(AsSb)/InAs superlattices, Phys. Rev. B55 (1997) 4589-4595.
-
(1997)
Phys. Rev.
, vol.B55
, pp. 4589-4595
-
-
Li, Y.B.1
Bain, D.J.2
Hart, L.3
-
25
-
-
0031163177
-
High-temperature 4.5 μm type II quantum well laser with Auger suppression
-
C.L. Felix, J.R. Meyer, I Vurgaftman, C.H. Lin, S.J. Murry, D. Zhang, S.S. Pei, High-temperature 4.5 μm type II quantum well laser with Auger suppression, Photon. Tech. Lett. 9 (1997) 734-736.
-
(1997)
Photon. Tech. Lett.
, vol.9
, pp. 734-736
-
-
Felix, C.L.1
Meyer, J.R.2
Vurgaftman, I.3
Lin, C.H.4
Murry, S.J.5
Zhang, D.6
Pei, S.S.7
-
26
-
-
0028547371
-
High-efficiency, high-temperature mid-infrared (λ → 4 mm) InAsSb/GaSb lasers
-
H.Q. Le, G.W. Turner, J.R. Ochoa, A. Sanchez, High-efficiency, high-temperature mid-infrared (λ → 4 mm) InAsSb/GaSb lasers, Electron. Lett. 30 (1994) 1944-1945.
-
(1994)
Electron. Lett.
, vol.30
, pp. 1944-1945
-
-
Le, H.Q.1
Turner, G.W.2
Ochoa, J.R.3
Sanchez, A.4
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