Characterization of grown-in defects in CZ-Si crystals by bright field IR laser interferometer

Materials Research Society Symposium - Proceedings

Volumn 442, Issue , 1997, Pages 113-118

  Nakai, Katsuhiko ^a   Hasebe, Masami ^a   Iwasaki, Toshio ^a   Tsumori, Yasuo ^a  

^a NIPPON STEEL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; INTERFEROMETRY; MORPHOLOGY;

CRYSTAL COOLING; GATE OXIDE INTEGRITY; LASER INTERFEROMETER; OXYGEN PRECIPITATE PROFILER; SIZE DISTRIBUTION; VOLUME DENSITY;

SEMICONDUCTING SILICON;

EID: 0030647711     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)