A Mobility Model for Submicrometer MOSFET Simulations Including Hot-Carrier-Induced Device Degradation

IEEE Transactions on Electron Devices

Volumn 35, Issue 9, 1988, Pages 1487-1493

  Hiroki, Akira ^a   Odanaka, Shinji ^a   Ohe, Kikuyo ^a   Esaki, Hideya ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES -- COMPUTER SIMULATION; TRANSISTORS, FIELD EFFECT--DEGRADATION;

HOT-CARRIER INDUCED DEGRADATION; MOBILITY MODEL; SUBMICROMETER MOSFET;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024072046     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.2581     Document Type: Article

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