메뉴 건너뛰기
Applied Physics Letters
Volumn 60, Issue 18, 1992, Pages 2267-2269
Lateral straggle of focused-ion-beam implanted Be in GaAs
(6)
Vignaud, D
a
Etchin, S
a
Liao, K S
a
Musil, C R
a
Antoniadis, D A
a
Melngailis, J
a
a
MASSACHUSETTS INSTITUTE OF TECHNOLOGY
(
United States
)
Author keywords
[No Author keywords available]
Indexed keywords
EID
:
0009737773
PISSN
:
00036951
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1063/1.107050
Document Type
:
Article
Times cited : (
9
)
References (
17
)
1
5244243205
(1988)
IEEE Electron Device Lett.
, vol.9
, pp. 281
Evason, A.F.
1
Cleaver, J.R.A.
2
Ahmed, H.
3
2
0023454848
(1987)
IEEE Trans. Electron Devices
, vol.ED-34
, pp. 2232
Rensch, D.B.
1
Matthews, D.S.
2
Utlaut, M.W.
3
Courtney, M.D.
4
Clark, W.M.
5
3
0024072716
(1988)
IEEE Electron Device Lett.
, vol.9
, pp. 476
Lezec, H.J.
1
Ismail, K.
2
Mahoney, L.J.
3
Shepard, M.I.
4
Antoniadis, D.A.
5
Melngailis, J.
6
4
84950975787
Proc. IEEE 1988 Custom. Integrated Circuits Conf. P. 18.7.1 (May), IEEE 88 CH 2584–1
(1988)
Walden, R.H.
1
Schmitz, A.E.
2
Larson, L.E.
3
Kramer, A.R.
4
Pasiecznik, J.
5
5
0042616509
(1991)
J. Vac. Sci. Technol. B
, vol.9
, pp. 2714
Murguia, J.E.
1
Shepard, M.I.
2
Melngailis, J.
3
Lattes, A.L.
4
Munroe, S.C.
5
6
36549095077
(1990)
Appl. Phys. Lett.
, vol.56
, pp. 385
Nakamura, K.
1
Tsui, D.C.
2
Nihey, F.
3
Toyoshima, H.
4
Itoh, T.
5
7
21544458252
(1990)
Appl. Phys. Lett.
, vol.56
, pp. 928
Wieck, A.D.
1
Ploog, K.
2
8
0001373569
(1989)
Appl. Phys. Lett.
, vol.54
, pp. 2103
Hiramoto, T.
1
Hirakawa, K.
2
Iye, Y.
3
Ikoma, T.
4
9
0000235265
(1980)
Nucl. Instrum. Methods Phys. Res.
, vol.174
, pp. 257
Biersack, J.P.
1
Haggmark, L.G.
2
10
38549103044
(1978)
Solid State Commun.
, vol.25
, pp. 1003
McLevige, W.V.
1
Vaidyanathan, K.V.
2
Streetman, B.G.
3
Comas, J.
4
Plew, L.
5
11
0343913774
(1983)
Appl. Phys. Lett.
, vol.43
, pp. 505
Tabatabaie-Alavi, K.
1
Masum Choudhury, A.N.M.
2
Fonstad, C.G.
3
Gelpey, J.C.
4
12
84950580189
(1985)
Inst. Phys. Conf. Ser.
, vol.74
, pp. 71
Wilson, R.G.
1
13
18844469053
(1983)
Jpn. J. Appl. Phys.
, vol.22
, pp. L423
Miyauchi, E.
1
Arimoto, H.
2
Bamba, Y.
3
Takamori, A.
4
Hashimoto, H.
5
Utsumi, T.
6
14
0020830991
also
(1983)
J. Vac. Sci. Technol. B
, vol.1
, pp. 1113
Miyauchi, E.
1
Arimoto, H.
2
Hashimoto, H.
3
Utsumi, T.
4
15
3242873171
(1990)
Appl. Phys. Lett.
, vol.56
, pp. 1561
Laruelle, F.
1
Bagchi, A.
2
Tsuchiya, M.
3
Merz, J.
4
Petroff, P.M.
5
16
84951049362
(1991)
J. Vac. Sci. Technol. B
, vol.9
, pp. fl73
Huh, S.
1
Shepard, M.I.
2
Melngailis, J.
3
17
0003497098
(Springer, New York)
(1984)
Analysis and Simulation of Semiconductor Devices
, pp. 55
Selberherr, S.
1
* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.