Novel transport simulation of vertically-grown MOSFETs by cellular automaton method

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 351-354

  Rein, A ^a   Zandler, G ^a   Saraniti, M ^a   Lugli, P ^a   Vogl, P ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMATA THEORY; DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; MONTE CARLO METHODS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SIMULATION; TRANSCONDUCTANCE; TRANSIT TIME DEVICES;

BOLTZMANN TRANSPORT SIMULATION; CELLULAR AUTOMATA METHOD; POISSON EQUATION MULTIGRID SOLVER; SHORT CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 0028738031     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)