Deposition of Cs on graphitized 4H-SiC surfaces

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 335-338

  Van Eisbergen, V ^a   Nienhaus, H ^a   Monch W ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

Cesium; Contact Potential Difference Measurements (CPD); Graphitized Surface; High Resolution Electron Energy Loss Spectroscopy (HREELS); Intercalation; Ultraviolet Photoemission Spectroscopy (UPS)

Indexed keywords

CESIUM; CHARGE TRANSFER; DEPOSITION; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; GRAPHITIZATION; SEMICONDUCTING SILICON COMPOUNDS; SURFACE STRUCTURE; ULTRAVIOLET SPECTROSCOPY; VACUUM APPLICATIONS;

CONTACT POTENTIAL DIFFERENCE (CPD) MEASUREMENTS; HIGH RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPY (HREELS); INTERCALATION; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY (UPS);

SILICON CARBIDE;

EID: 0031705478     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

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