Nucleation of partial dislocations from a surface-step in semiconductors: A first approach of the mobility effect

EPJ Applied Physics

Volumn 2, Issue 2, 1998, Pages 99-105

  Brochard, S ^a,b   Rabier, J ^a,b   Grilhe J ^a,b  

^a UNIVERSITÉ DE POITIERS   (France)

^b UMR 6630 CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); DISSOCIATION; ELASTIC MODULI; MATHEMATICAL MODELS; MORPHOLOGY; NUCLEATION;

MOBILITY EFFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031702581     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:1998171     Document Type: Article

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