Excimer laser crystallization and doping of source and drain regions in high quality amorphous silicon thin film transistors

Applied Physics Letters

Volumn 69, Issue 25, 1996, Pages 3857-3859

  Al Nuaimy, E A ^a   Marshall, J M ^a  

^a SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000159574     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117128     Document Type: Article

References (9)

1. S. M. Gadelrab and S. G. Chamberlain, Mater. Res. Soc. Symp. Proc. 336, 835 (1994).
2. A. Chenevas-Paule, B. Diem, T. Leroux, and R. Truche, Proc. Soc. Inf. Disp. 26, 197 (1985).
3. O. Sugiura, C. D. Kim, and M. Matsumura, Electron. Lett. 29, 750 (1993).
4. T. F. Deutsch, J. C. C. Fan, G. W. Turner, R. L. Chapman, D. J. Ehrlich, and R. M. Osgood, J. Appl. Phys. 38, 144 (1981).
5. T. Samashima and S. Usui, Jpn. J. Appl. Phys. 1 26, L1208 (1987).
6. Y. W. Wong, X. Q. Yang, P. W. Chan, and K. Y. Tong, Appl. Surf. Sci. 64, 259 (1993).
7. K. Sera, F. Okumura, S. Kaneko, S. Itoh, K. Hotta, and H. Hoshino, J. Appl. Phys. 67, 2359 (1990).
8. E. Fogarassy, H. Pattyn, M. Elliq, A. Slaoui, B. Prevot, R. Stuck, S. de Unamuno, and E. L. Mathe, Appl. Surf. Sci. 69, 231 (1993).
9. S. M. Sze, Semiconductor Devices (Wiley, New York, 1985).