In situ monitoring of growth rate parameters in hot-wire assisted gas source-molecular beam epitaxy using a quartz microbalance

Applied Surface Science

Volumn 115, Issue 3, 1997, Pages 299-306

  Chelly, R ^a   Angot, T ^a   Louis, P ^a   Bolmont, D ^a   Koulmann, J J ^a  

^a UNIVERSITÉ DE HAUTE ALSACE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH;

HOT WIRE ASSISTED CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING SILICON;

EID: 0031185415     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00002-0     Document Type: Article

References (29)

1. M. Ogirima, H. Saida, M. Suzuki and M. Makai, J. Electrochem. Soc. 124 (1977) 903.
2. G.R. Srinivasan and B.S. Meyerson, J. Electrochem. Soc. 134 (1987) 1518.
3. B.S. Meyerson, Proc. IEEE 80 (1992) 1592.
4. T.J. Donahue and R. Reif, J. Appl. Phys. 57 (1985) 2757.
5. S. Nishida, T. Shumoto, A. Yamada, S. Karasawa, M. Konagai and K. Takahashi, Appl. Phys. Lett. 49 (1986) 79.
6. S. Van, D. Steinmetz, F. Ringeisen, D. Bolmont and J.J. Koulmann, Appl. Phys. Lett. 57 (1990) 1760.
7. S. Van, D. Steinmetz, F. Ringeisen, D. Bolmont and J.J. Koulmann, Phys. Rev. B 44 (1991) 13807.
8. R. Chelly, T. Angot, D. Bolmont and J.J. Koulmann, Appl. Phys. Lett. 67 (1995) 1733.
9. A.W. Laubengayer, D.T. Hurd, A.E. Newkirk and J.L. Hoard, J. Am. Chem. Soc. 65 (1943) 1925.
10. H. Wiesmann, A.K. Ghosh, T. Mc Mahon and M. Strongin, J. Appl. Phys. 50 (1979) 3752.
11. H. Matsumura, Jpn. J. Appl. Phys. 25 (1986) 949.
12. H. Matsumura, J. Appl. Phys. 65 (1989) 4396.
13. J. Doyle, R. Robertson, G.H. Lin, M.Z. He and A. Gallagher, J. Appl. Phys. 64 (1988) 3215.
14. A.H. Mahan, J. Carapella, B.P. Nelson, R.S. Crandall and I. Balberg, J. Appl. Phys. 69 (1991) 6728.
15. R. Zedlitz, F. Kessler and M. Heintze, J. Non-Cryst. Solids 164-166 (1993) 83.
16. P. Papadopoulos, A. Scholtz, S. Bauer, B. Schröder and H. Oechsner, J. Non-Cryst. Solids 164-166 (1993) 87.
17. C.S. Fadley, Prog. Surf. Sci. 16 (1984) 275.
18. W.F. Egelhoff, Solid State Mater. Sci. 16 (1990) 213.
19. G. Gewinner, unpublished.
20. W.G. Moffat, Handbook of Binary Phase Diagrams (Business Growth Services, General Electric Co., Schenectady, New York, 1976).
21. R. Chelly, T. Angot, D. Bolmont and J.J. Koulmann, to be published.
22. J.J. Koulmann, F. Ringeisen, M. Alaoui and D. Bolmont, Phys. Rev. B 41 (1990) 3878.
23. D. Steinmetz, F. Ringeisen, D. Bolmont and J.J. Koulmann, Surf. Sci. 237 (1990) 135.
24. J.N. Smith and W.L. Fite, J. Chem. Phys. 37 (1962) 898.
25. C. Gelain, A. Cassuto and P. Logoff, Soc. Fran. Ceram. Bull. 80 (1968) 431.
26. M. Alaoui, F. Ringeisen, D. Muller, D. Bolmont and J.J. Koulmann, Appl. Surf. Sci. 38 (1989) 133.
27. E.Y. Zandberg, A.G. Kamenev and V.E. Paleev, Sov. Phys. Tech. 16 (1971) 1567.
28. M. Grosman and D.G. Löffler, J. Catal. 80 (1983) 188.
29. R. Gat and J.C. Angus, J. Appl. Phys. 74 (1993) 5981.