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Volumn 115, Issue 3, 1997, Pages 299-306
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In situ monitoring of growth rate parameters in hot-wire assisted gas source-molecular beam epitaxy using a quartz microbalance
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
DECOMPOSITION;
EPITAXIAL GROWTH;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING FILMS;
SEMICONDUCTING GERMANIUM;
SEMICONDUCTOR GROWTH;
HOT WIRE ASSISTED CHEMICAL VAPOR DEPOSITION;
SEMICONDUCTING SILICON;
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EID: 0031185415
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(97)00002-0 Document Type: Article |
Times cited : (5)
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References (29)
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