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Volumn 115, Issue 3, 1997, Pages 299-306

In situ monitoring of growth rate parameters in hot-wire assisted gas source-molecular beam epitaxy using a quartz microbalance

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH;

EID: 0031185415     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00002-0     Document Type: Article
Times cited : (5)

References (29)
  • 20
    • 0003650899 scopus 로고
    • Business Growth Services, General Electric Co., Schenectady, New York
    • W.G. Moffat, Handbook of Binary Phase Diagrams (Business Growth Services, General Electric Co., Schenectady, New York, 1976).
    • (1976) Handbook of Binary Phase Diagrams
    • Moffat, W.G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.