Modeling the post-burn-in abnormal base current in AlGaAs/GaAs heterojunction bipolar transistors

Journal of Applied Physics

Volumn 79, Issue 9, 1996, Pages 7348-7352

  Sheu, S ^a   Liou, J J ^a   Huang, C I ^b   Williamson, D C ^c  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c USAF   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004837212     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361451     Document Type: Article

References (10)

1. M. E. Hafizi, L. M. Pawlowicz, L. T. Tran, D. K. Umemoto, D. C. Streit, A. K. Oki, M. E. Kim, and K. H. Yen, in Digest of the IEEE GaAs IC Symposium, 1990, p. 329.
2. T. Henderson, D. Hill, W. Liu, D. Costa, H. F. Chau, T. S. Kim, and A. Khatibzadeh, in Digest IEEE IEDM, 1994.
3. H. Sugahara, J. Nagano, T. Nittono, and K. Ogawa, in Digest IEEE GaAs IC Symposium 1993, p. 115.
4. J. J. Liou and C. I. Huang, Solid-State Electron. 37, 1349 (1994).
5. J. L. Benton, M. Levinson, A. T. Macrander, H. Temkin, and L. C. Kimerling, Appl. Phys. Lett. 45, 566 (1984).
6. J. J. Liou, C. I. Huang, B. Bayraktaroglu, D. C. Willamson, and K. B. Parab, J. Appl. Phys. 76, 1349 (1994).
7. For example, see J. J. Liou, Advanced Semiconductor Device Physics and Modeling (Artech, Boston, 1994).
8. G. A. M. Hurkx, D. B. M. Klaassen, and M. P. G., IEEE Trans. Electron Devices ED-39, 331 (1992).
9. C.-T. Sah, Fundamentals of Solid-State Electronics (World Scientific, Singapore, 1991), Chap. 3.
10. M. S. Shur, GaAs Devices and Circuits (Plenum, New York, 1987).