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Volumn 68, Issue 6, 1996, Pages 809-811
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Improved heterojunction bipolar transistor reliability with carbon-doped base
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0006420636
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.116540 Document Type: Article |
Times cited : (4)
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References (6)
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