Using soft lithography to fabricate GaAs/AlGaAs heterostructure field effect transistors

Applied Physics Letters

Volumn 71, Issue 14, 1997, Pages 2020-2022

  Hu, Junmin ^a   Beck, R G ^a,b   Deng, Tao ^a   Westervelt, R M ^a,b   Maranowski, K D ^a,c   Gossard, A C ^a,c   Whitesides, George M ^a  

^a HARVARD UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

^c University of California at Santa Barbara   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; POLYMERS; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

MICROMOLDING IN CAPILLARY; SOFT LITHOGRAPHY;

FIELD EFFECT TRANSISTORS;

EID: 0031556442     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119774     Document Type: Article

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