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Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 751-756

Investigation of the interfacial quality and the influence of different substrates in ZnSe homoepitaxy

(7) Wenisch, H a Behr, T b Kreissl, J c Schull K b Siche, D d Hartmann, H d Hommel, D a

a UNIVERSITY OF BREMEN (Germany)

b UNIVERSITY OF WÜRZBURG (Germany)

c TECHNISCHE UNIVERSITÄT BERLIN (Germany)

d LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH (Germany)

Author keywords

EPR; Homoepitaxy; Interface; LED; TEM; ZnSe

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTALLIZATION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PARAMAGNETIC RESONANCE; PHASE INTERFACES; PHASE TRANSITIONS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

BRIDGMAN METHOD; CHEMICAL VAPOUR TRANSPORT; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0031547524 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00050-X Document Type: Article

Times cited : (5)

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