Growth of bulk ZnSe crystals - Recent developments

Physica Status Solidi (B) Basic Research

Volumn 194, Issue 1, 1996, Pages 101-108

  Siche, D ^a   Hartmann, H ^a   Bottcher K ^a   Krause, E ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0030527820     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.2221940111     Document Type: Article

References (13)

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7. Z. YU, C. BONEY, W. C. HUGHES, W. H. ROWLAND, JR., J. W. COOK, JR., J. F. SCHETZINA, G. CANTWELL, and W. C. HARSCH, Electronics Letters 31, 1341 (1995).
8. H. HARTMANN and D. SICHE, J. Crystal Growth 138, 260 (1994).
9. D. SICHE and H. HARTMANN, Source Material Dependent Growth Limitations in Unseeded Dissociative Sublimation of ZnSe, XIth Internat. Conf. Crystal Growth, The Hague (The Netherlands), June 18 to 23, 1995.
10. K. BÖTTCHER and H. HARTMANN, J. Crystal Growth 146, 53 (1995).
11. H. WENISCH, K. SCHÜLL, D. HOMMEL, G. LANDWEHR, D. SICHE, and H. HARTMANN, submitted to Semicond. Sci. Technol.
12. YU. V. KOROSTELIN, private communication (P. N. Lebedev Physics Institute, Moscow).
13. 0.8Se Multi-Quantum-Well LEDs: Homoepitaxy on ZnSe Substrates and Heteroepitaxy on (In, Ga)As/GaAs Buffer Layers, 7th Internat. Conf. II-VI Compounds and Devices, Heriot-Watt University, Edinburgh, Scotland (UK), August 13 to 18, 1995, Elsevier (North Holland) Publ. Co., Amsterdam/New York.