(Cd,Zn) Se multi-quantum-well LEDs: Homoepitaxy on ZnSe substrates and heteroepitaxy on (In,Ga) As/GaAs buffer layers

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 26-31

  Wenisch, H ^a,b   Schull K ^a   Behr, T ^a   Hommel, D ^a,b   Landwehr, G ^a   Siche, D ^c   Rudolph, P ^c   Hartmann, H ^c  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b UNIVERSITY OF BREMEN   (Germany)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; SUBLIMATION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

AMPOULES; BROADENING; FULL WIDTH AT HALF MAXIMUM; HETEROEPITAXY; HOMOEPITAXY; IODINE TRANSPORT;

LIGHT EMITTING DIODES;

EID: 0030562234     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00870-5     Document Type: Article

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