Reliable wide-temperature-range operation of 1.3-μm beam-expander integrated laser diode for passively aligned optical modules

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 6, 1997, Pages 1405-1412

  Aoki, Masahiro ^a,b,c   Komori, Masaaki ^a,c,d,e,f   Sato, Hiroshi ^a,c,d,g   Tsuchiya, Tomonobu ^a,c,d,h   Taike, Akira ^a,b,c,d   Takahashi, Makoto ^a,c,d,g   Uomi, Kazuhisa ^a,c,d,i,j   Tsuji, Shinji ^a,c,d,k  

^a HITACHI LTD   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^d Hirosima Institute of Technology ^*

^e Hiroshima Institute of Technology   (Japan)

^f OSAKA UNIVERSITY   (Japan)

^g WASEDA UNIVERSITY   (Japan)

^h UNIVERSITY OF TSUKUBA   (Japan)

ⁱ HIROSHIMA UNIVERSITY   (Japan)

^j TELCORDIA TECHNOLOGIES   (United States)

^k KYOTO UNIVERSITY   (Japan)

more..

Author keywords

Beam expander integrated laser diodes; Ridge waveguide laser diode; Silicon shadow mask growth; Wide temperature range

Indexed keywords

ALIGNMENT; LASER BEAMS; OPERATIONS RESEARCH; OPTICAL WAVEGUIDES; RELIABILITY; SEMICONDUCTING SILICON;

WAVEGUIDE LASERS;

SEMICONDUCTOR LASERS;

EID: 0031366435     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.658795     Document Type: Article

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